Linearity improvement of VCSELs based radio over fiber systems utilizing digital predistortion

The article proposes a Digital Predistortion (DPD) methodology that substantially meliorates the linearity of limited range Mobile Front Haul links for the extant Long-Term Evolution (LTE) and future (5G) networks. Specifically, the DPD is employed to Radio over Fiber links that contrive of Vertical Cavity Surface Emitting Lasers (VCSELs) working at 850 nm. Both, Memory and Generalized Memory Polynomial models are implied to Single Mode (SM) and Multi-Mode (MM) VCSELs respectively. The effectiveness of the proposed DPD methodology is analyzed in terms of Normalized Mean Square Error, Normalized Magnitude, Normalized phase and Adjacent Channel Power Ratio. The demonstration has been carried out with a complete (Long Term Evolution) LTE frame of 10 ms having 5 MHz bandwidth with 64-QAM modulation configuration. Additionally, the effectuality of the proposed DPD technique is evaluated for varying levels of input power and link lengths. The experimental outcomes signify the novel capability of the implied DPD methodology for different link lengths to achieve higher system linearization

Improving the opto-microwave performance of SiGe/Si phototransistor through edge-illuminated structure

This paper demonstrates the experimental study of edge and top illuminated SiGe phototransistors (HPT) implemented using the existing industrial SiGe2RF Telefunken GmbH BiCMOS technology for opto-microwave (OM) applications using 850nm Multi-Mode Fibers (MMF). Its technology and structure are described. Two different optical window size HPTs with top illumination (5x5µm 2 , 10x10µm 2) and an edge illuminated HPTs having 5µm x5µm size are presented and compared. A two-step post fabrication process was used to create an optical access on the edge of the HPT for lateral illumination with a lensed MMF through simple polishing and dicing techniques. We perform Opto-microwave Scanning Near-field Optical Microscopy (OM-SNOM) analysis on edge and top illuminated HPTs in order to observe the fastest and the highest sensitive regions of the HPTs. This analysis also allows understanding the parasitic effect from the substrate, and thus draws a conclusion on the design aspect of SiGe/Si HPT. A low frequency OM responsivity of 0.45A/W and a cutoff frequency, f-3dB , of 890MHz were measured for edge illuminated HPT. Compared to the top illuminated HPT of the same size, the edge illuminated HPT improves the f-3dB by a factor of more than two and also improves the low frequency responsivity by a factor of more than four. These results demonstrate that a simple etched HPT is still enough to achieve performance improvements compared to the top illuminated HPT without requiring a complex coupling structure. Indeed, it also proves the potential of edge coupled SiGe HPT in the ultra-low-cost silicon based optoelectronics circuits with a new approach of the optical packaging and system integration to 850nm MMF

Study of lateral scaling impact on the frequency performance of SiGe Heterojunction Bipolar Phototransistor

The influence of the lateral scaling such as emitter width and length on the frequency behavior of SiGe bipolar transistor is experimentally studied. Electrical transistors of different emitter sizes are designed and fabricated by using a commercial bipolar transistor technology. The effect of peripheral current and collector current spreading on electrical bipolar transistor performances are analyzed in regards to the state of the art. Furthermore, the lateral scaling effect on SiGe phototransistor electrical and opto-microwave frequency behavior is studied. The impact of the lateral flow of photo-generated carriers toward the optical opening in phototransistor structure is investigated. Moreover, the 2-D carrier flow effect on the opto-microwave frequency behavior of the phototransistor is characterized through optomicrowave scanning near-field optical microscopy measurements, in the course of which the intrinsic parameters, such as transit time and junction capacitances are extracted over the surface of the phototransistor. An intrinsic optical transition frequency of 6.5 GHz is measured for 10 × 10 μm2

Substrate diode effect on the performance of Silicon Germanium phototransistors

This paper provides a study on the substrate effect on the opto-microwave behavior of Silicon-Germanium Heterojunction bipolar Photo-Transistors (HPT). An Opto-Microwave Scanning Near Field Optical Microscopy (OM-SNOM) is performed to observe the distribution of photocurrent and dynamic behavior over the structure of the phototransistor. The photocurrent generated in the photodiode created by a n++ sub-collector and p+ substrate is extracted and analyzed. A maximum substrate diode current of 700μA is observed at 850nm with a related cutoff frequency of 0.42GHz. We have extracted low frequency responsivity (at 50MHz) bandwidth product of 109.2 MHzA/W. Finally, this study will provide a design guide line for Si base phototransistors

Improved Nonlinear Model Implementation for VCSEL Behavioral Modeling in Radio-Over-Fiber links

Open Access provided by `Alma Mater Studiorum - Università di Bologna' within the CRUI CARE AgreementInternational audienc

An 850 nm SiGe/Si HPT with a 4.12 GHz maximum optical transition frequency and 0.805A/W responsivity

A 10 × 10 μm2 SiGe heterojunction bipolar photo-transistor (HPT) is fabricated using a commercial technological process of 80 GHz SiGe bipolar transistors (HBT). Its technology and structure are first briefly described. Its optimal opto-microwave dynamic performance is then analyzed versus voltage biasing conditions for opto-microwave continuous wave measurements. The optimal biasing points are then chosen in order to maximize the optical transition frequency (fTopt) and the opto-microwave responsivity of the HPT. An opto-microwave scanning near-field optical microscopy (OM-SNOM) is performed using these optimum bias conditions to localize the region of the SiGe HPT with highest frequency response. The OM-SNOM results are key to extract the optical coupling of the probe to the HPT (of 32.3%) and thus the absolute responsivity of the HPT. The effect of the substrate is also observed as it limits the extraction of the intrinsic HPT performance. A maximum optical transition frequency of 4.12 GHz and an absolute low frequency opto-microwave responsivity of 0.805A/W are extracted at 850 nm

Radio sur fibre pour un réseau local domestique millimétrique

National audienceLe projet FUI ORIGIN (Optical-Radio Infrastructure for Gigabit/s Indoor Networks) adresse le marché du Réseau Local Domestique pour lequel il propose une nouvelle infrastructure à très haut débit associant un câblage à fibre optique avec une diffusion radio 60GHz. Les premiers tests de cette infrastructure ont donné des résultats probants : un lien Radio sur Fibre en fréquence intermédiaire étendant la portée d'une transmission radio millimétrique est ici proposé et caractérisé complètement en termes d'EVM. Ce concept est validé par l'utilisation de produits commerciaux Wireless HD. Les études se poursuivent pour intégrer les systèmes optique-microondes en utilisant des composants bas coûts et innovants, comme les phototransistors SiGe/Si et des VCSEL analogiques

Liaison sans fils à 60 GHz et réseau domestique multi-gigabit/s basé sur une infrastructure radio sur fibre bas coût

National audienceLe projet FUI8 ORIGIN (Optical Radio Infrastructure for Gigabit/s Indoor Network) s'adresse au marché du Réseau Local Domestique (RLD) en proposant une infrastructure bas coût qui combine l'efficacité de la fibre optique pour la diffusion radio avec les avantages d'une transmission sans fils. Les premières réalisations et les tests réussis sont présentés dans ce papier

Origin : a 60 GHz radio-over-fiber home area network project

International audience